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B105M ITMS4037 OA5669 2812D LXT361QE 445LP4E PS151 NTE7409
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  Datasheet File OCR Text:
 16 Vgs =2.0V 12
10 Vgs=5V 8 25C 125C
Id (A)
8 Vgs =1.5V 4
Id (A)
5
6
4
2 Vgs =1.0V 0 0 1 2 3 4 Vds (Volts) Figure 1: On-Regions Characteristi 0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs (Volts) Figure 2: Transfer Characteristics
cs
90
1.6 Vgs =1.8V Id=4.1A
Normalize ON-Resistance
80
Rds(on) (m:)
1.4
70 60 50 40 30 0 2 4 6 8 10 Vgs =4.5V Vgs =2.5V
Vgs=1.8V Vgs=2.5V
1.2
Vgs=4.5V
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
90 80 Id=4.1A
1E+01 1E+00 125C 1E-01
Rds(on) (m:)
70
Is (A)
60 125C 50 40 30 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C
1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 25C
5 Vds=4.5V 4
800
Id=4.1A
Capacitance (pF)
700 600 500 400 300 200 100 Crss Coss Ciss
Vgs (Volts)
3
2
1
0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics
100 Rds(on) limited
12 10
0.1s 1 Tj(max) =150C Ta =25C 0.1 0.1 1 1s 10s
1ms 10ms
100Ps
Power (W)
100
10
10Ps
8 6 4 2
Id (A)
DC 0 10 0.001 0.01 0.1 1 10 100 1000
Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.Z Tja.R Tja RTja=90C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton T
0.01 0.00001
Single Pulse 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence


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